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SQ4470EY
www.vishay.com
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V DS (V)
R DS(on) ( ? ) at V GS = 10 V
R DS(on) ( ? ) at V GS = 6 V
I D (A)
Configuration
60
0.012
0.014
16
Single
FEATURES
? TrenchFET ? Power MOSFET
? AEC-Q101 Qualified c
? 100 % R g and UIS Tested
? Material categorization: ?
For definitions of compliance please see
www.vishay.com/doc?99912
D
SO-8
S
1
8
D
S
S
G
2
3
4
7
6
5
D
D
D
G
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4470EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
60
± 20
UNIT
V
Continuous Drain Current
T C = 25 °C
T C = 125 °C
I D
16
9
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
I S
I DM
6
67
A
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T C = 25 °C
T C = 125 °C
I AS
E AS
P D
T J , T stg
50
125
7.1
2.3
- 55 to + 175
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB
Mount b
R thJA
R thJF
80
21
°C/W
Notes
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
S12-1845-Rev. C, 30-Jul-12
1
Document Number: 65673
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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